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Vishay SQD40N06-14L_GE3 MOSFETs

Power Field-Effect Transistor, 40A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

987 ActiveVishayTO-252AA$1.32
SQD40N06-14L_GE3 TO-252AA package illustration

Same model may have multiple batches, images only for reference.

SQD40N06-14L_GE3
Manufacturer
Part Number (MPN)
SQD40N06-14L_GE3
Detailed Description
Power Field-Effect Transistor, 40A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Package
TO-252AA
Lifecycle Status
Active
Datasheet
PDF SQD40N06-14L_GE3 Datasheet
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Technical Specifications

Vishay SQD40N06-14L_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
Yes
Number of Pins
3
Number of Channels
1
Package / Case
TO-252AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
40 A
Current Continuous Drain ID 25 C
40A (Tc)

Alternate Parts Comparison (SQD40N06-14L_GE3 vs SQD50P08-28_GE3 vs SQD40P10-40L_GE3 vs SQD97N06-6M3L_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®SQAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Mounting TypeSurface MountSMD/SMTSurface MountSurface Mount
RoHSYesYesYesYes
TechnologyMOSFET (Metal Oxide)SiMOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature-55°C ~ 175°C (TJ)---55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C40A (Tc)--38A (Tc)97A (Tc)
Drain to Source Voltage Vdss60 V--100 V60 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V--4.5V, 10V4.5V, 10V
Fet TypeN-Channel--P-ChannelN-Channel
Gate Charge Qg Max Vgs51 nC @ 10 V--144 nC @ 10 V125 nC @ 10 V
Input Capacitance Ciss Max Vds2105 pF @ 25 V--5540 pF @ 15 V6060 pF @ 25 V
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