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Vishay SIHD690N60E-GE3 MOSFETs

Power Field-Effect Transistor,

6,000 ActiveVishayTO-252AA$1.42
SIHD690N60E-GE3 TO-252AA package illustration

Same model may have multiple batches, images only for reference.

SIHD690N60E-GE3
Manufacturer
Part Number (MPN)
SIHD690N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-252AA
Lifecycle Status
Active
Datasheet
PDF SIHD690N60E-GE3 Datasheet
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Technical Specifications

Vishay SIHD690N60E-GE3 MOSFETs technical specifications.

General

Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
6.4 A
Rds on Drain Source Resistance
700 mOhms

Related Parts Comparison (SIHD690N60E-GE3 vs SQD100N02-3M5L_GE3 vs SQD97N06-6M3L_GE3 vs SUD40151EL-GE3)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
SeriesEAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®TrenchFET® Gen IV
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSYesYesYesYes
TechnologySiMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Package / Case--TO-252AATO-252AATO-252AA
Lifecycle Status--ActiveActiveActive
Current Continuous Drain ID 25 C--100A (Tc)97A (Tc)42A (Tc)
Drain to Source Voltage Vdss--20 V60 V40 V
Drive Voltage Max Rds on Min Rds on--4.5V, 10V4.5V, 10V4.5V, 10V
Fet Type--N-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs--110 nC @ 10 V125 nC @ 10 V112 nC @ 10 V
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