Vishay SIHD690N60E-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHD690N60E-GE3
Detailed Description
Power Field-Effect Transistor,
Package
TO-252AA
Lifecycle Status
Active
Datasheet
SIHD690N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHD690N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
6.4 A
Rds on Drain Source Resistance
700 mOhms
Alternate Parts Comparison (SIHD690N60E-GE3 vs SQD100N02-3M5L_GE3 vs SQD97N06-6M3L_GE3 vs SUD40151EL-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | E | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | TrenchFET® Gen IV |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | -- | TO-252AA | TO-252AA | TO-252AA |
| Lifecycle Status | -- | Active | Active | Active |
| Current Continuous Drain ID 25 C | -- | 100A (Tc) | 97A (Tc) | 42A (Tc) |
| Drain to Source Voltage Vdss | -- | 20 V | 60 V | 40 V |
| Drive Voltage Max Rds on Min Rds on | -- | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | -- | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | -- | 110 nC @ 10 V | 125 nC @ 10 V | 112 nC @ 10 V |
| Action |
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