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Vishay SQD19P06-60L_GE3 MOSFETs

Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2

5,839 ActiveVishayTO-252, (D-Pak)$1.84RoHS
SQD19P06-60L_GE3 TO-252, (D-Pak) package illustration

Same model may have multiple batches, images only for reference.

SQD19P06-60L_GE3
Manufacturer
Part Number (MPN)
SQD19P06-60L_GE3
Detailed Description
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3/2
Package
TO-252, (D-Pak)
Lifecycle Status
Active
RoHS State
RoHS Compliant
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Technical Specifications

Vishay SQD19P06-60L_GE3 MOSFETs technical specifications.

General

Series
SQ
RoHS
Yes
Number of Pins
3
Number of Channels
1 Channel
Package / Case
TO-252,
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single

Alternate Parts Comparison (SQD19P06-60L_GE3 vs SQD10950E_GE3 vs SQD15N06-42L_GE3 vs SQD40081EL_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesSQAutomotive, AEC-Q101, TrenchFET®TrenchFET®Automotive, AEC-Q101, TrenchFET®
Package / CaseTO-252,DPAKTO-252,DPAK
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Number of Pins3323
RoHSYesCompliantYesCompliant with Exemption
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C20A (Tc)11.5A (Tc)15A (Tc)50A (Tc)
Drain to Source Voltage Vdss60 V250 V60 V40 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V7.5V, 10V4.5V, 10V10 V
Fet TypeP-ChannelN-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs41 nC @ 10 V16 nC @ 10 V15 nC @ 10 V210 nC @ 10 V
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