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Vishay SQ4937EY-T1_GE3 MOSFETs

Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

3,047 ActiveVishay8-SOIC$1.49
SQ4937EY-T1_GE3 8-SOIC package illustration

Same model may have multiple batches, images only for reference.

SQ4937EY-T1_GE3
Manufacturer
Part Number (MPN)
SQ4937EY-T1_GE3
Detailed Description
Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Package
8-SOIC
Lifecycle Status
Active
Datasheet
PDF SQ4937EY-T1_GE3 Datasheet
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Technical Specifications

Vishay SQ4937EY-T1_GE3 MOSFETs technical specifications.

General

Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Compliant
Number of Pins
8
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
5 A
Current Continuous Drain ID 25 C
5A (Tc)
Drain to Source Voltage Vdss
30 V

Related Parts Comparison (SQ4937EY-T1_GE3 vs SI4948BEY-T1-GE3 vs SI4435FDY-T1-GE3 vs SI4447DY-T1-GE3)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD/SMTSMD/SMTSMD/SMT
RoHSCompliantYesYesYes
SeriesAutomotive, AEC-Q101, TrenchFET®SI4--SI4
Number of Channels--2 Channel1 Channel1 Channel
Channel Mode--EnhancementEnhancementEnhancement
Configuration--DualSingleSingle
ID Continuous Drain Current--3.1 A12.6 A4.5 A
Package--8-SOIC8-SOIC8-SOIC
Pd Power Dissipation--2.4 W4.8 W2 W
Qg Gate Charge--22 nC13.5 nC14 nC
Rds on Drain Source Resistance--120 mOhms30 mOhms54 mOhms
Technology--SiSiSi
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