Vishay SQ4937EY-T1_GE3 MOSFETs
Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ4937EY-T1_GE3
Detailed Description
Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Package
8-SOIC
Lifecycle Status
Active
Datasheet
SQ4937EY-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQ4937EY-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Compliant
Number of Pins
8
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
5 A
Current Continuous Drain ID 25 C
5A (Tc)
Drain to Source Voltage Vdss
30 V
Alternate Parts Comparison (SQ4937EY-T1_GE3 vs SI4948BEY-T1-GE3 vs SI4435FDY-T1-GE3 vs SI4447DY-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Compliant | Yes | Yes | Yes |
| Series | Automotive, AEC-Q101, TrenchFET® | SI4 | -- | SI4 |
| Number of Channels | -- | 2 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Dual | Single | Single |
| ID Continuous Drain Current | -- | 3.1 A | 12.6 A | 4.5 A |
| Package | -- | 8-SOIC | 8-SOIC | 8-SOIC |
| Pd Power Dissipation | -- | 2.4 W | 4.8 W | 2 W |
| Qg Gate Charge | -- | 22 nC | 13.5 nC | 14 nC |
| Rds on Drain Source Resistance | -- | 120 mOhms | 30 mOhms | 54 mOhms |
| Technology | -- | Si | Si | Si |
| Action |
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