Vishay SI4447DY-T1-GE3 MOSFETs
P-Channel Power MOSFET, 40V, 3.3A, 54mR, SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4447DY-T1-GE3
Base Model
Detailed Description
P-Channel Power MOSFET, 40V, 3.3A, 54mR, SOIC
Package
8-SOIC
Lifecycle Status
Active
Datasheet
SI4447DY-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI4447DY-T1-GE3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
54 mOhms
Alternate Parts Comparison (SI4447DY-T1-GE3 vs SI4447DY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | 8-SOIC | SOIC-8 | UFBGA-4 | UFBGA-4 |
| Series | SI4 | SI4 | SIP324x1 | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Pd Power Dissipation | 2 W | 2 W | 300 mW | -- |
| Unit Weight | 0.026455 oz | 0.006596 oz | 0.002420 oz | -- |
| Action |
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