Vishay SI4800BDY-T1-GE3 MOSFETs
N-Channel JFET, 30V, 6.5A ID, 18.5mR Rds(on), SO Package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4800BDY-T1-GE3
Base Model
Detailed Description
N-Channel JFET, 30V, 6.5A ID, 18.5mR Rds(on), SO Package
Package
8-SOIC
Lifecycle Status
Active
Datasheet
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Technical Specifications
Vishay SI4800BDY-T1-GE3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
9 A
Rds on Drain Source Resistance
18.5 mOhms
Alternate Parts Comparison (SI4800BDY-T1-GE3 vs SI4800BDY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C (TJ) | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Series | SI4 | TrenchFET® | SIP324x1 | -- |
| Package | 8-SOIC | -- | UFBGA-4 | UFBGA-4 |
| Package / Case | -- | 8-SO | 4-UFBGA | 4-UFBGA |
| Lifecycle Status | -- | Active | Active | Active |
| Action |
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