Vishay SI3493BDV-T1-E3 MOSFETs
P-Channel MOSFET, 20V, 7A, 27.5mR, TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI3493BDV-T1-E3
Base Model
Detailed Description
P-Channel MOSFET, 20V, 7A, 27.5mR, TSOP
Package
TSOP-6
Lifecycle Status
Active
Datasheet
SI3493BDV-T1-E3 Datasheet
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Technical Specifications
Vishay SI3493BDV-T1-E3 MOSFETs technical specifications.
General
Series
SI3
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
27.5 mOhms
Alternate Parts Comparison (SI3493BDV-T1-E3 vs SI3493BDV-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | TSOP-6 | UFBGA-4 | UFBGA-4 |
| Series | SI3 | SI3 | SIP324x1 | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Pd Power Dissipation | 2.97 W | 2.97 W | 300 mW | -- |
| Unit Weight | 0.000705 oz | 0.000705 oz | 0.002420 oz | -- |
| Action |
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