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Vishay SI3437DV-T1-GE3 MOSFETs

P-CH JFET, 150V, 1.1A, 750mR, TSOP, Small Signal

8,305 ActiveVishaySI3437DVTSOP-6$0.70
SI3437DV-T1-GE3 TSOP-6 package illustration

Same model may have multiple batches, images only for reference.

SI3437DV-T1-GE3
Manufacturer
Part Number (MPN)
SI3437DV-T1-GE3
Base Model
Detailed Description
P-CH JFET, 150V, 1.1A, 750mR, TSOP, Small Signal
Package
TSOP-6
Lifecycle Status
Active
Datasheet
PDF SI3437DV-T1-GE3 Datasheet
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Ordering Code Family

SI3437DV groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay SI3437DV-T1-GE3 MOSFETs technical specifications.

General

Series
SI3
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
150 V
ID Continuous Drain Current
1.4 A
Rds on Drain Source Resistance
750 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (SI3437DV-T1-GE3 vs SI3437DV-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSMD/SMTSurface MountSurface Mount
RoHSYesYesYesYes
PackageTSOP-6SOT-23-6Thin,TSOT-23-6UFBGA-4UFBGA-4
SeriesSI3SI3SIP324x1--
Maximum Operating Temperature C+ 150+ 150+ 85--
Minimum Operating Temperature C- 55- 55- 40--
Pd Power Dissipation3.2 W3.2 W300 mW--
Unit Weight0.000705 oz0.000705 oz0.002420 oz--
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Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

FDMC86262PFDMC86262Ponsemi
Similaronsemi
Pin NoPkg NoElec Upgrade
MOSFETs P-Channel PowerTrench MOSFET -150 V, -2 A, 307 mO

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