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Vishay SQ2389ES-T1_GE3 MOSFETs

Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

138 ActiveVishaySQ2389ESSOT23-3$0.26
SQ2389ES-T1_GE3 SOT23-3 package illustration

Same model may have multiple batches, images only for reference.

SQ2389ES-T1_GE3
Manufacturer
Part Number (MPN)
SQ2389ES-T1_GE3
Base Model
Detailed Description
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Package
SOT23-3
Lifecycle Status
Active
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Ordering Code Family

SQ2389ES groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay SQ2389ES-T1_GE3 MOSFETs technical specifications.

General

Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
4.1 A
Rds on Drain Source Resistance
94 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (SQ2389ES-T1_GE3 vs SQ2389ES-T1_BE3 vs SQ2361ES-T1_GE3 vs SI2316BDS-T1-E3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesROHS3 CompliantYesYes
PackageSOT23-3Tape & Reel (TR)SOT23-3SOT23-3
SeriesSQTrenchFET®--SI2
Mounting TypeSMD/SMTSurface Mount--SMD/SMT
Number of Channels1 Channel1 Channel--1 Channel
Channel ModeEnhancementEnhancement--Enhancement
ConfigurationSingle--SINGLE WITH BUILT-IN DIODESingle
Fall Time4 ns4 ns--7 ns
ID Continuous Drain Current4.1 A4.1 A--4.5 A
Pd Power Dissipation3 W3 W--1.66 W
Qg Gate Charge8.2 nC8.2 nC--3.16 nC
Rds on Drain Source Resistance94 mOhms94 mOhms--50 mOhms
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