Vishay SQ2389ES-T1_GE3 MOSFETs
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ2389ES-T1_GE3
Base Model
Detailed Description
Small Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Package
SOT23-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SQ2389ES-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
4.1 A
Rds on Drain Source Resistance
94 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQ2389ES-T1_GE3 vs SQ2389ES-T1_BE3 vs SQ2361ES-T1_GE3 vs SI2316BDS-T1-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | ROHS3 Compliant | Yes | Yes |
| Package | SOT23-3 | Tape & Reel (TR) | SOT23-3 | SOT23-3 |
| Series | SQ | TrenchFET® | -- | SI2 |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | -- | SINGLE WITH BUILT-IN DIODE | Single |
| Fall Time | 4 ns | 4 ns | -- | 7 ns |
| ID Continuous Drain Current | 4.1 A | 4.1 A | -- | 4.5 A |
| Pd Power Dissipation | 3 W | 3 W | -- | 1.66 W |
| Qg Gate Charge | 8.2 nC | 8.2 nC | -- | 3.16 nC |
| Rds on Drain Source Resistance | 94 mOhms | 94 mOhms | -- | 50 mOhms |
| Action |
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