Vishay SQ2389ES-T1_BE3 MOSFETs
MOSFET P-CH 40V 4.1A SOT23-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ2389ES-T1_BE3
Base Model
Detailed Description
MOSFET P-CH 40V 4.1A SOT23-3
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
SQ2389ES-T1_BE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQ2389ES-T1_BE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Current Continuous Drain ID 25 C
4.1A (Tc)
Drain to Source Voltage Vdss
40 V
Alternate Parts Comparison (SQ2389ES-T1_BE3 vs SQ2389ES-T1_GE3 vs SQ2361AEES-T1_GE3 vs SQ2362ES-T1_BE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | SQ | TrenchFET® | TrenchFET® |
| Mounting Type | Surface Mount | SMD/SMT | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | ROHS3 Compliant | Yes | ROHS3 Compliant | ROHS3 Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Fall Time | 4 ns | 4 ns | 4 ns | 18 ns |
| Pd Power Dissipation | 3 W | 3 W | 2 W | 3 W |
| Qg Gate Charge | 8.2 nC | 8.2 nC | 10 nC | 7.6 nC |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 94 mOhms | 94 mOhms | 170 mOhms | 68 mOhms |
| Rise Time | 12 ns | 12 ns | 9 ns | 20 ns |
| Technology | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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SQ2389ES-T1_GE3VishaySmall Signal Field-Effect Transistor, 4.1A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, T…
