Vishay SIZF906DT-T1-GE3 MOSFETs
Power Field-Effect Transistor, 60A I(D), 30V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIZF906DT-T1-GE3
Detailed Description
Power Field-Effect Transistor, 60A I(D), 30V, 0.0038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
8-PowerPair® (6x5)
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIZF906DT-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET® Gen IV
RoHS
Yes
Number of Pins
6
Package / Case
8-PowerPair®
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TA)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
60A (Tc)
Drain to Source Voltage Vdss
30 V
Fet Feature
Standard
Alternate Parts Comparison (SIZF906DT-T1-GE3 vs SIZF916DT-T1-GE3 vs SIA461DJ-T1-GE3 vs SIS407ADN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® Gen IV | SIZ | SIA | SIS |
| Mounting Type | Surface Mount | Surface Mount | SMD/SMT | SMD/SMT |
| RoHS | Yes | RoHS Compliant | Yes | Yes |
| Number of Channels | -- | 2 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Dual | Single | Single |
| Fall Time | -- | 10 ns, 20 ns | 20 ns | 36 ns |
| Forward Transconductance Min | -- | 53 S, 91 S | 20 S | 70 S |
| ID Continuous Drain Current | -- | 40 A, 60 A | 12 A | 18 A |
| Maximum Operating Temperature C | -- | 150 | + 150 | + 150 |
| Minimum Operating Temperature C | -- | -55 | - 55 | - 55 |
| Pd Power Dissipation | -- | 26.6 W, 60 W | 17.9 W | 39.1 W |
| Action |
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