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Vishay SISA96DN-T1-GE3 MOSFETs

Power Field-Effect Transistor

9,000 ActiveVishayPowerPAK-1212-8$1.00
SISA96DN-T1-GE3 PowerPAK-1212-8 package illustration

Same model may have multiple batches, images only for reference.

SISA96DN-T1-GE3
Manufacturer
Part Number (MPN)
SISA96DN-T1-GE3
Detailed Description
Power Field-Effect Transistor
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
PDF SISA96DN-T1-GE3 Datasheet
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Technical Specifications

Vishay SISA96DN-T1-GE3 MOSFETs technical specifications.

General

Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
16 A
Rds on Drain Source Resistance
7.3 mOhms

Alternate Parts Comparison (SISA96DN-T1-GE3 vs SISA12ADN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackagePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
SeriesSISSIS----
Mounting TypeSMD/SMTSMD/SMT----
Number of Channels1 Channel1 Channel----
Channel ModeEnhancementEnhancement----
ConfigurationSingleSingle----
Fall Time25 ns10 ns----
Forward Transconductance Min70 S51 S----
ID Continuous Drain Current16 A25 A----
Pd Power Dissipation26.5 W28 W----
Qg Gate Charge31 nC45 nC----
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Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

More Parts in MOSFETs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.