Vishay SISA26DN-T1-GE3 MOSFETs
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISA26DN-T1-GE3
Detailed Description
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 EP T/R
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISA26DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISA26DN-T1-GE3 MOSFETs technical specifications.
General
Series
SiSA26DN
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
25 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
2.15 mOhms
Alternate Parts Comparison (SISA26DN-T1-GE3 vs SISA12ADN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SiSA26DN | SIS | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 8 ns | 10 ns | -- | -- |
| Forward Transconductance Min | 88 S | 51 S | -- | -- |
| ID Continuous Drain Current | 60 A | 25 A | -- | -- |
| Pd Power Dissipation | 39 W | 28 W | -- | -- |
| Qg Gate Charge | 44 nC | 45 nC | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
Similaronsemi
Pin NoPkg NoElec Mixed
MOSFET - Power, Single N-Channel, Power33, 25V, 152 A, 3000-REEL
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