Vishay SISA18ADN-T1-GE3 MOSFETs
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISA18ADN-T1-GE3
Detailed Description
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SISA18ADN-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
PowerPAK-1212-8
Alternate Parts Comparison (SISA18ADN-T1-GE3 vs SISA12ADN-T1-GE3 vs SIS407ADN-T1-GE3 vs SI7115DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | -- | SIS | SIS | SI7 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 10 ns | 36 ns | 35 ns |
| Forward Transconductance Min | -- | 51 S | 70 S | 12 S |
| ID Continuous Drain Current | -- | 25 A | 18 A | 8.9 A |
| Maximum Operating Temperature C | -- | + 150 | + 150 | + 150 |
| Minimum Operating Temperature C | -- | - 55 | - 55 | - 50 |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
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