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Vishay SISA18ADN-T1-GE3 MOSFETs

Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

2,435 ActiveVishayPowerPAK-1212-8$0.49
SISA18ADN-T1-GE3 PowerPAK-1212-8 package illustration

Same model may have multiple batches, images only for reference.

SISA18ADN-T1-GE3
Manufacturer
Part Number (MPN)
SISA18ADN-T1-GE3
Detailed Description
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
PowerPAK-1212-8
Lifecycle Status
Active
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Technical Specifications

Vishay SISA18ADN-T1-GE3 MOSFETs technical specifications.

General

RoHS
Yes
Package
PowerPAK-1212-8

Alternate Parts Comparison (SISA18ADN-T1-GE3 vs SISA12ADN-T1-GE3 vs SIS407ADN-T1-GE3 vs SI7115DN-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackagePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Series--SISSISSI7
Mounting Type--SMD/SMTSMD/SMTSMD/SMT
Number of Channels--1 Channel1 Channel1 Channel
Channel Mode--EnhancementEnhancementEnhancement
Configuration--SingleSingleSingle
Fall Time--10 ns36 ns35 ns
Forward Transconductance Min--51 S70 S12 S
ID Continuous Drain Current--25 A18 A8.9 A
Maximum Operating Temperature C--+ 150+ 150+ 150
Minimum Operating Temperature C--- 55- 55- 50
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

Suggested replacements

NTTFS4C10NTAGNTTFS4C10NTAGonsemi
Similaronsemi
Pin YesPkg YesElec Mixed
Power MOSFET 30V 44A 7.4 mOhm Single N-Channel u8FL, WDFN8 3.3x3.3, 0.65P, 1500-REEL

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