Vishay SISA14DN-T1-GE3 MOSFETs
Power Field-Effect Transistor, 20A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISA14DN-T1-GE3
Detailed Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISA14DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISA14DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
20 A
Rds on Drain Source Resistance
4.25 mOhms
Vgs Gate Source Voltage
- 16 V, + 20 V
Alternate Parts Comparison (SISA14DN-T1-GE3 vs SISA12ADN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | SIS | -- | -- |
| Mounting Type | SMD/SMT | SMD/SMT | -- | -- |
| Number of Channels | 1 Channel | 1 Channel | -- | -- |
| Channel Mode | Enhancement | Enhancement | -- | -- |
| Configuration | Single | Single | -- | -- |
| Fall Time | 8 ns | 10 ns | -- | -- |
| Forward Transconductance Min | 65 S | 51 S | -- | -- |
| ID Continuous Drain Current | 20 A | 25 A | -- | -- |
| Maximum Operating Temperature C | + 150 | + 150 | -- | -- |
| Minimum Operating Temperature C | - 55 | - 55 | -- | -- |
| Action |
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