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Vishay SIS990DN-T1-GE3 MOSFETs

Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

1,852 ActiveVishay100$1.36
SIS990DN-T1-GE3 100 package illustration

Same model may have multiple batches, images only for reference.

SIS990DN-T1-GE3
Manufacturer
Part Number (MPN)
SIS990DN-T1-GE3
Detailed Description
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
100
Lifecycle Status
Active
Datasheet
PDF SIS990DN-T1-GE3 Datasheet
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Technical Specifications

Vishay SIS990DN-T1-GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
Yes
Number of Channels
2
Package / Case
100
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Dual
Continuous Drain Current ID
12.1 A

Alternate Parts Comparison (SIS990DN-T1-GE3 vs SIS176LDN-T1-GE3 vs SIS476DN-T1-GE3 vs SIS862DN-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®TrenchFET® Gen IVTrenchFET®TrenchFET®
Package / Case100Tape and ReelPowerPAK® 1212-8PowerPAK® 1212-8
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliant with ExemptionCompliantYes
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C12.1 A12.9A (Ta), 42.3A (Tc)40A (Tc)40A (Tc)
Drain to Source Voltage Vdss100 V70 V30 V60 V
Fet Type2 N-Channel (Dual)N-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs8nC @ 10V19 nC @ 4.5 V77 nC @ 10 V32 nC @ 10 V
Input Capacitance Ciss Max Vds250pF @ 50V1660 pF @ 35 V3595 pF @ 15 V1320 pF @ 30 V
Rds on Max ID Vgs85mOhm @ 8A, 10V10.9mOhm @ 10A, 4.5V2.5mOhm @ 15A, 10V8.5mOhm @ 20A, 10V
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