Vishay SIS903DN-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS903DN-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® 1212-8 Dual
Lifecycle Status
Active
Datasheet
SIS903DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIS903DN-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET® Gen III
RoHS
Yes
Package / Case
PowerPAK® 1212-8 Dual
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
6A (Tc)
Drain to Source Voltage Vdss
20 V
Fet Feature
Standard
Fet Type
2 P-Channel (Dual)
Alternate Parts Comparison (SIS903DN-T1-GE3 vs SIS443DN-T1-GE3 vs SIS176LDN-T1-GE3 vs SIS406DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® Gen III | TrenchFET® | TrenchFET® Gen IV | TrenchFET® |
| Package / Case | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 | Tape and Reel | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Compliant with Exemption | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 6A (Tc) | 35A (Tc) | 12.9A (Ta), 42.3A (Tc) | 9A (Ta) |
| Drain to Source Voltage Vdss | 20 V | 40 V | 70 V | 30 V |
| Fet Type | 2 P-Channel (Dual) | P-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 42nC @ 10V | 135 nC @ 10 V | 19 nC @ 4.5 V | 28 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 2565pF @ 10V | 4370 pF @ 20 V | 1660 pF @ 35 V | 1100 pF @ 15 V |
| Rds on Max ID Vgs | 20.1mOhm @ 5A, 4.5V | 11.7mOhm @ 15A, 10V | 10.9mOhm @ 10A, 4.5V | 11mOhm @ 12A, 10V |
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