Vishay SIS415DNT-T1-GE3 MOSFETs
MOSFET P-CH 20V 35A 1212-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS415DNT-T1-GE3
Detailed Description
MOSFET P-CH 20V 35A 1212-8
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SIS415DNT-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIS415DNT-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
3.3 mOhms
Alternate Parts Comparison (SIS415DNT-T1-GE3 vs SIS782DN-T1-GE3 vs SIS472ADN-T1-GE3 vs SIS407ADN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | -- | SIS | SIS |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Technology | Si | -- | Si | Si |
| Trade Name | TrenchFET, PowerPAK | -- | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Unit Weight | 0.032487 oz | -- | 0.032487 oz | 0.032487 oz |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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