Vishay SIS412DN-T1-GE3 MOSFETs
30V N-CH MOSFET, 24mR Rds(on), 12A ID, 8-Pin PowerPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS412DN-T1-GE3
Base Model
Detailed Description
30V N-CH MOSFET, 24mR Rds(on), 12A ID, 8-Pin PowerPAK
Package
PowerPAK-1212-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
Quick Jump:
Technical Specifications
Vishay SIS412DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
24 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (SIS412DN-T1-GE3 vs SIS412DN vs SIS782DN-T1-GE3 vs SIS472ADN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | -- | Yes | Yes |
| Package | PowerPAK-1212-8 | -- | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Series | SIS | -- | -- | SIS |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Technology | Si | -- | -- | Si |
| Trade Name | TrenchFET, PowerPAK | -- | -- | TrenchFET, PowerPAK |
| Unit Weight | 0.032487 oz | -- | -- | 0.032487 oz |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 10 ns | -- | -- | -- |
| Forward Transconductance Min | 17 S | -- | -- | -- |
| Action |
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