Vishay SIRA00DP-T1-GE3 MOSFETs
N-CH MOSFET 30V 60A 1mR SOIC Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIRA00DP-T1-GE3
Detailed Description
N-CH MOSFET 30V 60A 1mR SOIC Surface Mount
Package
SOIC
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIRA00DP-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
8
Number of Channels
1
Package / Case
SOIC
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Contact Plating
Tin
Continuous Drain Current ID
60 A
Alternate Parts Comparison (SIRA00DP-T1-GE3 vs SIRA02DP-T1-GE3 vs SIRA06DP-T1-GE3 vs SIRA12DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | SIR | SIR | SIR |
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Fall Time | 11 ns | 8 ns | 8 ns | 10 ns |
| Rise Time | 14 ns | 10 ns | 10 ns | 10 ns |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Forward Transconductance Min | -- | 110 S | 105 S | 51 S |
| ID Continuous Drain Current | -- | 50 A | 40 A | 60 A |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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