Vishay SI4459BDY-T1-GE3 MOSFETs
Trans MOSFET P-CH 30V 20.5A 8-Pin SOIC N T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4459BDY-T1-GE3
Detailed Description
Trans MOSFET P-CH 30V 20.5A 8-Pin SOIC N T/R
Package
SOIC
Lifecycle Status
Active
Datasheet
SI4459BDY-T1-GE3 Datasheet
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Technical Specifications
Vishay SI4459BDY-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
27.8 A
Rds on Drain Source Resistance
4.6 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI4459BDY-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Package | 8-SO | UFBGA-4 | UFBGA-4 | 4-UFDFNExposedPad |
| Pd Power Dissipation | 5.6 W | 300 mW | -- | 324 mW |
| Unit Weight | 0.026455 oz | 0.002420 oz | -- | 0.001764 oz |
| Package / Case | -- | 4-UFBGA | 4-UFBGA | 4-UFDFN Exposed Pad |
| Supply Voltage | -- | Not Required | Not Required | Not Required |
| Interface | -- | On/Off | On/Off | On/Off |
| Lifecycle Status | -- | Active | Active | Active |
| Current Output Max | -- | 1.2A | 1.2A | 2.4A |
| Fault Protection | -- | Reverse Current | Reverse Current | Reverse Current |
| Action |
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