Vishay SIRA12DP-T1-GE3 MOSFETs
30V N-CH MOSFET, 25A, 4.3mR Rds(on), SOIC, SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIRA12DP-T1-GE3
Detailed Description
30V N-CH MOSFET, 25A, 4.3mR Rds(on), SOIC, SM
Package
PowerPAK-SO-8
Lifecycle Status
Active
Datasheet
SIRA12DP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIRA12DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
True
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
60 A
Rds on Drain Source Resistance
3.2 mOhms
Alternate Parts Comparison (SIRA12DP-T1-GE3 vs SIRA24DP-T1-GE3 vs SI7949DP-T1-GE3 vs SIR820DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | True | True | True |
| Package | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 | PowerPAK-SO-8 |
| Series | SIR | SIR | -- | SIR |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Technology | Si | Si | -- | Si |
| Trade Name | -- | -- | -- | -- |
| Unit Weight | 0.017870 oz | 0.017870 oz | -- | 0.017870 oz |
| Action |
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