Vishay SIJ128LDP-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIJ128LDP-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK SO-5
Lifecycle Status
Active
Datasheet
SIJ128LDP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIJ128LDP-T1-GE3 MOSFETs technical specifications.
General
Series
SIJ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
80 V
ID Continuous Drain Current
25.5 A
Rds on Drain Source Resistance
15.6 mOhms
Alternate Parts Comparison (SIJ128LDP-T1-GE3 vs SIJ494DP-T1-GE3 vs SIJ186DP-T1-GE3 vs SIJ438DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK SO-5 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 | PowerPAK-SO-8-4 |
| Series | SIJ | -- | -- | SIJ |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| ID Continuous Drain Current | 25.5 A | -- | -- | 80 A |
| Pd Power Dissipation | 22.3 W | -- | -- | 69.4 W |
| Qg Gate Charge | 20 nC | -- | -- | 182 nC |
| Rds on Drain Source Resistance | 15.6 mOhms | -- | -- | 1.35 mOhms |
| Technology | Si | -- | -- | Si |
| Action |
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