Vishay SIHG25N50E-GE3 MOSFETs
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG25N50E-GE3
Detailed Description
Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Package
TO-247AC-3
Lifecycle Status
Active
Datasheet
SIHG25N50E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG25N50E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
26 A
Rds on Drain Source Resistance
145 mOhms
Alternate Parts Comparison (SIHG25N50E-GE3 vs SIHG80N60EF-GE3 vs SIHG018N60E-GE3 vs SIHG33N60EF-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 | TO-247AC-3 |
| Series | E | -- | -- | EF |
| Mounting Type | Through Hole | -- | -- | Through Hole |
| Technology | Si | -- | -- | Si |
| Unit Weight | 0.211644 oz | -- | -- | 0.211644 oz |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 29 ns | -- | -- | -- |
| ID Continuous Drain Current | 26 A | -- | -- | -- |
| Action |
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