Vishay SIHB12N65E-GE3 MOSFETs
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHB12N65E-GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2
Package
TO-263-3
Lifecycle Status
Active
Datasheet
SIHB12N65E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHB12N65E-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
TO-263-3
Related Parts Comparison (SIHB12N65E-GE3 vs SIHB12N60E-GE3 vs SIHB33N60ET1-GE3 vs SIHB23N60E-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Compliant | Yes | Yes |
| Package | TO-263-3 | -- | TO-263-3 | TO-263-3 |
| Mounting Type | -- | Surface Mount | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | -- | 1 | 1 Channel | 1 Channel |
| Fall Time | -- | 38 ns | 48 ns | 34 ns |
| Rise Time | -- | 38 ns | 43 ns | 38 ns |
| Technology | -- | MOSFET (Metal Oxide) | Si | Si |
| Action |
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