Vishay IRF510SPBF MOSFETs
N-Channel MOSFET, 100V, 5.6A, 540mR Rds On, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF510SPBF
Detailed Description
N-Channel MOSFET, 100V, 5.6A, 540mR Rds On, D2PAK
Package
TO-263-3
Lifecycle Status
Active
Datasheet
IRF510SPBF Datasheet
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Technical Specifications
Vishay IRF510SPBF MOSFETs technical specifications.
General
Series
IRF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
5.6 A
Rds on Drain Source Resistance
540 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRF510SPBF vs IRF9Z34STRLPBF vs IRF540STRLPBF vs IRF830STRLPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IRF | IRF9Z | IRF | IRF |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 5.6 A | 18 A | 28 A | 4.5 A |
| Package | TO-263-3 | TO-263-3 | TO-263-3 | TO-263-3 |
| Pd Power Dissipation | 43 W | 88 W | 3.7 W | 74 W |
| Qg Gate Charge | 8.3 nC | 34 nC | 72 nC | 38 nC |
| Rds on Drain Source Resistance | 540 mOhms | 140 mOhms | 77 mOhms | 1.5 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | P-Channel | N-Channel | N-Channel |
| Action |
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