Vishay SIAA02DJ-T1-GE3 MOSFETs
Trans MOSFET N-CH 20V 52A 6-Pin PowerPAK SC-70 EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIAA02DJ-T1-GE3
Detailed Description
Trans MOSFET N-CH 20V 52A 6-Pin PowerPAK SC-70 EP T/R
Package
SC-70-6
Lifecycle Status
Active
Datasheet
SIAA02DJ-T1-GE3 Datasheet
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Technical Specifications
Vishay SIAA02DJ-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
52 A
Rds on Drain Source Resistance
4.7 mOhms
Vgs Gate Source Voltage
- 8 V, + 12 V
Alternate Parts Comparison (SIAA02DJ-T1-GE3 vs SIAA00DJ-T1-GE3 vs SIA466EDJ-T1-GE3 vs SIA427DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Single | Single | -- | Single |
| ID Continuous Drain Current | 52 A | 40 A | -- | 12 A |
| Pd Power Dissipation | 19 W | 19.2 W | -- | 19 W |
| Qg Gate Charge | 22 nC | 15.7 nC | -- | 50 nC |
| Rds on Drain Source Resistance | 4.7 mOhms | 5.6 mOhms | -- | 95 mOhms |
| Technology | Si | Si | -- | Si |
| Trade Name | TrenchFET | TrenchFET, PowerPAK | -- | TrenchFET |
| Action |
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