Vishay SIA485DJ-T1-GE3 MOSFETs
Trans MOSFET P-CH 150V 1.6A 6-Pin PowerPAK SC-70 EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA485DJ-T1-GE3
Detailed Description
Trans MOSFET P-CH 150V 1.6A 6-Pin PowerPAK SC-70 EP T/R
Package
SC-70-6
Lifecycle Status
Active
Datasheet
SIA485DJ-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIA485DJ-T1-GE3 MOSFETs technical specifications.
General
Series
SIA
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
150 V
ID Continuous Drain Current
1.6 A
Rds on Drain Source Resistance
2.7 Ohms
Alternate Parts Comparison (SIA485DJ-T1-GE3 vs SIA466EDJ-T1-GE3 vs SIA429DJT-T1-GE3 vs SIA461DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Series | SIA | -- | SIA | SIA |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 1.6 A | -- | 12 A | 12 A |
| Pd Power Dissipation | 15.6 W | -- | 3.5 W | 17.9 W |
| Qg Gate Charge | 6.3 nC | -- | 62 nC | 18 nC |
| Rds on Drain Source Resistance | 2.7 Ohms | -- | 20.5 mOhms | 33 mOhms |
| Technology | Si | -- | Si | Si |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
Suggested replacements
FDMA86265PonsemiSimilaronsemi
Pin YesPkg YesElec Mixed
MOSFETs -150 P-Channel PowerTrench MOSFET
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