Vishay SIA400EDJ-T1-GE3 MOSFETs
N-Channel MOSFET, 30V, 19mR, 12A, 19.2W, SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA400EDJ-T1-GE3
Detailed Description
N-Channel MOSFET, 30V, 19mR, 12A, 19.2W, SMT
Package
PowerPAK® SC-70-6 Single
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIA400EDJ-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
6
Number of Channels
1
Package / Case
PowerPAK® SC-70-6 Single
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
12 A
Current Continuous Drain ID 25 C
12A (Tc)
Alternate Parts Comparison (SIA400EDJ-T1-GE3 vs SIA471DJ-T1-GE3 vs SIA519EDJ-T1-GE3 vs SIA517DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | SIA | SIA | TrenchFET® |
| Package / Case | PowerPAK® SC-70-6 Single | Tape and Reel | Tape and Reel | PowerPAK® SC-70-6 Dual |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | 6 | 6 | 6 | 6 |
| Number of Channels | 1 | 1 Channel | 2 Channel | 2 |
| RoHS | Yes | Compliant | Compliant | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 12A (Tc) | 12.9A (Ta), 30.3A (Tc) | 4.5 A | 4.5 A |
| Drain to Source Voltage Vdss | 30 V | 30 V | 20 V | 12 V |
| Fet Type | N-Channel | P-Channel | N and P-Channel | N and P-Channel |
| Gate Charge Qg Max Vgs | 36 nC @ 10 V | 27.8 nC @ 10 V | 12nC @ 10V | 15nC @ 8V |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SIA483DJ-T1-GE3VishayPower Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,…
