Vishay SI5513CDC-T1-GE3 MOSFETs
N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI5513CDC-T1-GE3
Base Model
Detailed Description
N/P-Ch JFET, 20V, 4A ID, 150mR Rds(on), SMD
Lifecycle Status
Active
Datasheet
SI5513CDC-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI5513CDC-T1-GE3 MOSFETs technical specifications.
General
Series
Si5513CDC
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
4 A, 3.7 A
Rds on Drain Source Resistance
55 mOhms, 150 mOhms
Alternate Parts Comparison (SI5513CDC-T1-GE3 vs SI5513CDC-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Series | Si5513CDC | Si5513CDC | SIP324x1 | -- |
| Pd Power Dissipation | 3.1 W | 3.1 W | 300 mW | -- |
| Unit Weight | 0.002998 oz | 0.002998 oz | 0.002420 oz | -- |
| Action |
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