Vishay SI3585DV-T1-GE3 MOSFETs
MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI3585DV-T1-GE3
Base Model
Detailed Description
MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Package
TSOP-6
Lifecycle Status
Active
Datasheet
SI3585DV-T1-GE3 Datasheet
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Technical Specifications
Vishay SI3585DV-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
TrenchFET
Feature Configuration
Dual
Feature Channel Mode
Enhancement
Feature Channel Type
P|N
Feature Number of Elements Per Chip
2
Feature Maximum Drain Source Voltage V
20
Feature Maximum Gate Source Voltage V
±12
Feature Maximum Continuous Drain Current a
2
Feature Maximum Drain Source Resistance Mohm
200@4.5V@P Channel|125@4.5V@N Channel
Alternate Parts Comparison (SI3585DV-T1-GE3 vs SI3585DV-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | 6-TSOP | UFBGA-4 | UFBGA-4 |
| Feature AEC Qualified | No | -- | -- | -- |
| Feature Auto Motive | No | -- | -- | -- |
| Feature Cecc Qualified | No | -- | -- | -- |
| Feature Channel Mode | Enhancement | -- | -- | -- |
| Feature Channel Type | P|N | -- | -- | -- |
| Feature Configuration | Dual | -- | -- | -- |
| Feature Maximum Continuous Drain Current a | 2 | -- | -- | -- |
| Feature Maximum Drain Source Resistance Mohm | 200@4.5V@P Channel|125@4.5V@N Channel | -- | -- | -- |
| Feature Maximum Drain Source Voltage V | 20 | -- | -- | -- |
| Feature Maximum Gate Source Voltage V | ±12 | -- | -- | -- |
| Action |
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