Vishay SI3585CDV-T1-GE3 MOSFETs
Trans MOSFET N/P-CH 20V 3.9A/2.1A 6-Pin TSOP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI3585CDV-T1-GE3
Base Model
Detailed Description
Trans MOSFET N/P-CH 20V 3.9A/2.1A 6-Pin TSOP T/R
Package
TSOP-6
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SI3585CDV-T1-GE3 MOSFETs technical specifications.
General
Series
SI3
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
2.1 A, 3.9 A
Rds on Drain Source Resistance
58 mOhms, 195 mOhms
Vgs Gate Source Voltage
- 8 V, + 8 V
Alternate Parts Comparison (SI3585CDV-T1-GE3 vs SI3585CDV vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | SOT23-6 | UFBGA-4 | UFBGA-4 |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Series | SI3 | -- | SIP324x1 | -- |
| Maximum Operating Temperature C | + 150 | -- | + 85 | -- |
| Minimum Operating Temperature C | - 55 | -- | - 40 | -- |
| Pd Power Dissipation | 1.3 W, 1.4 W | -- | 300 mW | -- |
| Unit Weight | 0.000705 oz | -- | 0.002420 oz | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Fall Time | 9 ns, 28 ns | -- | -- | -- |
| Action |
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