Vishay SI2356DS-T1-GE3 MOSFETs
N-Channel JFET, 40V, 4.3A, 56mR Rds(on), TO-236
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2356DS-T1-GE3
Detailed Description
N-Channel JFET, 40V, 4.3A, 56mR Rds(on), TO-236
Package
TO-236
Lifecycle Status
Active
Datasheet
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Technical Specifications
Vishay SI2356DS-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Channels
1
Package / Case
TO-236
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
4.3 A
Alternate Parts Comparison (SI2356DS-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-236 | 4-UFBGA | 4-UFBGA | 4-UFDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Series | TrenchFET® | SIP324x1 | -- | SIP324x1 |
| Pd Power Dissipation | 1.7 W | 300 mW | -- | 324 mW |
| Unit Weight | 0.000282 oz | 0.002420 oz | -- | 0.001764 oz |
| Supply Voltage | -- | Not Required | Not Required | Not Required |
| Interface | -- | On/Off | On/Off | On/Off |
| Current Output Max | -- | 1.2A | 1.2A | 2.4A |
| Fault Protection | -- | Reverse Current | Reverse Current | Reverse Current |
| Action |
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