Vishay IRL640SPBF MOSFETs
200V 17A N-Channel MOSFET, 180mR Rds On, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRL640SPBF
Detailed Description
200V 17A N-Channel MOSFET, 180mR Rds On, D2PAK
Package
TO-263
Lifecycle Status
Active
Datasheet
IRL640SPBF Datasheet
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Technical Specifications
Vishay IRL640SPBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
200 V
ID Continuous Drain Current
17 A
Rds on Drain Source Resistance
180 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Threshold Voltage
1 V
Alternate Parts Comparison (IRL640SPBF vs IRL540STRLPBF vs IRL540NPBF vs IRL530NSTRLPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Through Hole | Surface Mount |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | ROHS3 Compliant | Compliant with Exemption | Yes |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Maximum Operating Temperature C | + 150 | -- | 175 | 175 |
| Minimum Operating Temperature C | - 55 | -- | -55 | -55 |
| Pd Power Dissipation | 125 W | -- | 140 W | 3.8 W |
| Qg Gate Charge | 66 nC | -- | 49.3 nC | 22.7 nC |
| Rds on Drain Source Resistance | 180 mOhms | -- | 44 mOhms | 150 mOhms |
| Threshold Voltage | 1 V | -- | 2 V | 2 V |
| Action |
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