Vishay IRF9Z34SPBF MOSFETs
P-Channel MOSFET, 60V, 18A, 140mR RdsOn, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF9Z34SPBF
Detailed Description
P-Channel MOSFET, 60V, 18A, 140mR RdsOn, D2PAK
Package
TO-263
Lifecycle Status
Active
Datasheet
IRF9Z34SPBF Datasheet
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Technical Specifications
Vishay IRF9Z34SPBF MOSFETs technical specifications.
General
Series
IRF9Z
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
18 A
Rds on Drain Source Resistance
140 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (IRF9Z34SPBF vs IRF9540SPBF vs IRF540NPBF vs IRF540PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Through Hole | Through Hole |
| Number of Channels | 1 Channel | 1 | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Compliant with Exemption | Compliant with Exemption |
| Configuration | Single | SINGLE WITH BUILT-IN DIODE | Single | Single |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Threshold Voltage | 4 V | -4 V | 4 V | 4 V |
| Series | IRF9Z | -- | HEXFET® | IRF |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Maximum Operating Temperature C | + 175 | -- | 175 | 175 |
| Minimum Operating Temperature C | - 55 | -- | -55 | -55 |
| Pd Power Dissipation | 88 W | -- | 140 W | 150 W |
| Qg Gate Charge | 34 nC | -- | 47.3 nC | 72 nC |
| Action |
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