Vishay IRFS11N50APBF MOSFETs
500V 11A N-Channel MOSFET, 520mR Rds On, D2PAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFS11N50APBF
Base Model
Detailed Description
500V 11A N-Channel MOSFET, 520mR Rds On, D2PAK
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
IRFS11N50APBF Datasheet
Quick Jump:
Technical Specifications
Vishay IRFS11N50APBF MOSFETs technical specifications.
General
Series
IRFS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
11 A
Rds on Drain Source Resistance
520 mOhms
Alternate Parts Comparison (IRFS11N50APBF vs IRFS11N50ATRLP vs IRFS9N60ATRLPBF vs SUM110P06-08L-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IRFS | IRFS | IRFS | SUM |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| RoHS | Yes | Yes | Yes | Yes |
| Package | D2PAK-3 (TO-263-3) | TO-263-3 | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) |
| Technology | Si | Si | Si | Si |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 11 A | -- | 9.2 A | 110 A |
| Pd Power Dissipation | 170 W | -- | 170 W | 272 W |
| Qg Gate Charge | 52 nC | -- | 49 nC | 160 nC |
| Action |
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