Vishay IRFBE30LPBF MOSFETs
N-Channel MOSFET, 800V, 4.1A, 3R, TO-262
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRFBE30LPBF
Detailed Description
N-Channel MOSFET, 800V, 4.1A, 3R, TO-262
Package
TO-262-3
Lifecycle Status
Active
Datasheet
IRFBE30LPBF Datasheet
Quick Jump:
Technical Specifications
Vishay IRFBE30LPBF MOSFETs technical specifications.
General
RoHS
Yes
Number of Pins
3
Number of Channels
1
Package / Case
TO-262-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
4.1 A
Current Continuous Drain ID 25 C
4.1A (Tc)
Drain to Source Resistance
3R
Alternate Parts Comparison (IRFBE30LPBF vs IRFBE30SPBF vs IRFBE30PBF vs IRFBE20PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | SMD/SMT | Through Hole | Through Hole |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Fall Time | 30 ns | -- | 30 ns | 27 ns |
| Rise Time | 33 ns | -- | 33 ns | 17 ns |
| Series | -- | IRFBE | IRFBE | IRFBE |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| ID Continuous Drain Current | -- | 4.1 A | 4.1 A | 1.8 A |
| Package | -- | TO-263-3 | TO-220-3 | TO-220AB |
| Pd Power Dissipation | -- | 125 W | 125 W | 54 W |
| Action |
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