Vishay IRF840ASTRRPBF MOSFETs
N-Channel MOSFET, 500V, 8A, 850mR, TO-263
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRF840ASTRRPBF
Base Model
Detailed Description
N-Channel MOSFET, 500V, 8A, 850mR, TO-263
Package
D2PAK-3 (TO-263-3)
Lifecycle Status
Active
Datasheet
IRF840ASTRRPBF Datasheet
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Technical Specifications
Vishay IRF840ASTRRPBF MOSFETs technical specifications.
General
Series
IRF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
500 V
ID Continuous Drain Current
8 A
Rds on Drain Source Resistance
850 mOhms
Related Parts Comparison (IRF840ASTRRPBF vs IRF840ASTRLPBF vs IRF740ASTRLPBF vs IRF840STRLPBF)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | IRF | IRF | IRF | IRF |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 8 A | 8 A | 10 A | 8 A |
| Package | D2PAK-3 (TO-263-3) | TO-263-3 | D2PAK-3 (TO-263-3) | D2PAK-3 (TO-263-3) |
| Pd Power Dissipation | 125 W | 125 W | 125 W | 3.1 W |
| Qg Gate Charge | 38 nC | 38 nC | 36 nC | 63 nC |
| Rds on Drain Source Resistance | 850 mOhms | 850 mOhms | 550 mOhms | 850 mOhms |
| Action |
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