Vishay FQB34N20LTM MOSFETs
Discrete Semiconductors--Transistors--FETs, MOSFETs--Single FETs, MOSFETs
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FQB34N20LTM
Detailed Description
Discrete Semiconductors--Transistors--FETs, MOSFETs--Single FETs, MOSFETs
Package
SC-70-3
Lifecycle Status
Active
Datasheet
FQB34N20LTM Datasheet
Quick Jump:
Technical Specifications
Vishay FQB34N20LTM MOSFETs technical specifications.
General
Series
FQB34N20L
RoHS
RoHS Compliant By Exemption
Number of Pins
2
Number of Channels
1 Channel
Package / Case
SC-70-3
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Alternate Parts Comparison (FQB34N20LTM vs SI1302DL-T1-E3 vs SI4894BDY-T1-E3 vs TP0610K-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | FQB34N20L | SI1 | SI4 | TP0 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | RoHS Compliant By Exemption | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Pd Power Dissipation | 3.13 W | 310 mW | 2.5 W | 350 mW |
| Qg Gate Charge | 72 nC | 1.4 nC | 20 nC | 1.7 nC |
| Rds on Drain Source Resistance | 75 mOhms | 480 mOhms | 11 mOhms | 6 Ohms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | P-Channel |
| Unit Weight | 0.139332 oz | 0.000219 oz | 0.006596 oz | 0.000282 oz |
| Action |
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