Texas Instruments CSD88539NDT MOSFETs
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD88539NDT
Detailed Description
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Package
8-SOIC
Lifecycle Status
Active
Datasheet
CSD88539NDT Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD88539NDT MOSFETs technical specifications.
General
Series
CSD88539ND
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
11.7 A
Rds on Drain Source Resistance
28 mOhms
Alternate Parts Comparison (CSD88539NDT vs CSD75205W1015 vs CSD16322Q5C vs CSD16321Q5C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| RoHS | Yes | Yes | Yes with Exemption | Yes with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | Dual | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Package | 8-SOIC | DSBGA | VSON-CLIP EP | VSON-CLIP EP |
| Series | CSD88539ND | -- | CSD16322Q5C | CSD16321Q5C |
| Number of Channels | 2 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 4 ns | -- | 3.7 ns | 17 ns |
| ID Continuous Drain Current | 11.7 A | -- | 100 A | 100 A |
| Pd Power Dissipation | 2.1 W | -- | 3.1 W | 3.1 W |
| Qg Gate Charge | 7.2 nC | -- | 6.8 nC | 14 nC |
| Action |
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