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Texas Instruments CSD88539NDT MOSFETs

60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150

291 ActiveTexas Instruments8-SOIC$0.51
CSD88539NDT 8-SOIC package illustration

Same model may have multiple batches, images only for reference.

CSD88539NDT
Manufacturer
Part Number (MPN)
CSD88539NDT
Detailed Description
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
Package
8-SOIC
Lifecycle Status
Active
Datasheet
PDF CSD88539NDT Datasheet
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Technical Specifications

Texas Instruments CSD88539NDT MOSFETs technical specifications.

General

Series
CSD88539ND
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
11.7 A
Rds on Drain Source Resistance
28 mOhms

Alternate Parts Comparison (CSD88539NDT vs CSD75205W1015 vs CSD16322Q5C vs CSD16321Q5C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55°C ~ 150°C-55°C ~ 150°C-55°C ~ 150°C
RoHSYesYesYes with ExemptionYes with Exemption
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationDualDualSingle Quad Drain Triple SourceSingle Quad Drain Triple Source
Package8-SOICDSBGAVSON-CLIP EPVSON-CLIP EP
SeriesCSD88539ND--CSD16322Q5CCSD16321Q5C
Number of Channels2 Channel--1 Channel1 Channel
Fall Time4 ns--3.7 ns17 ns
ID Continuous Drain Current11.7 A--100 A100 A
Pd Power Dissipation2.1 W--3.1 W3.1 W
Qg Gate Charge7.2 nC--6.8 nC14 nC
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