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Texas Instruments CSD75205W1015 MOSFETs

P-channel Power MOSFET featuring NexFET process technology.

3,420 ActiveTexas InstrumentsDSBGA$2.48RoHS
CSD75205W1015 DSBGA package illustration

Same model may have multiple batches, images only for reference.

CSD75205W1015
Manufacturer
Texas Instruments
Part Number (MPN)
CSD75205W1015
Category
Discrete SemiconductorsTransistorsMOSFETs
Detailed Description
P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.
Package
DSBGA
Key Features
Package: DSBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF CSD75205W1015 Datasheet
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Technical Specifications

Texas Instruments CSD75205W1015 MOSFETs technical specifications.

General

RoHS
Yes
Number of Pins
6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package
DSBGA
Package Description
Die Size Ball Grid Array
Lead Shape
Ball
Pcb
6

Related Parts Comparison (CSD75205W1015 vs CSD43301Q5M vs CSD96371Q5M vs CSD95485RWJT)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Texas InstrumentsCSD75205W1015
Texas InstrumentsCSD43301Q5M
Texas InstrumentsCSD96371Q5M
Texas InstrumentsCSD95485RWJT
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
PackageDSBGALSON-CLIP (DQP)-12LSON-CLIP (DQP)-22VQFN-CLIP (RWJ)-41
ConfigurationDual--PowerStagePowerStage
Package / Case--12-Power LFDFN22-PowerLFDFN41-PowerTFQFN
Supply Voltage--Not Required4.5V ~ 5.5V4.5V ~ 5.5V
Interface--On/OffPWMLogic, PWM
Lifecycle Status--ActiveActiveActive
Fault Protection--UVLOShoot-Through, UVLOShoot-Through
Output Configuration--Low SideHalf BridgeHalf Bridge
Technology--SiPower MOSFETPower MOSFET
Action
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Texas Instruments CSD75205W1015 MOSFETs Overview

P-channel Power MOSFET featuring NexFET process technology. This dual-configuration transistor operates with a 20V maximum drain-source voltage and 1.2A continuous drain current. Housed in a compact 6-pin DSBGA package (1.3mm x 1.8mm x 0.65mm) with a 0.5mm pin pitch, it offers surface-mount capability. Key electrical characteristics include a maximum gate-source voltage of -6V and a low drain-source on-resistance of 145mOhm at 2.5V.

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