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Texas Instruments CSD16321Q5C MOSFETs

N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration.

8,230 ActiveTexas InstrumentsCSD16321QVSON-CLIP EP$2.44RoHS
CSD16321Q5C VSON-CLIP EP package illustration

Same model may have multiple batches, images only for reference.

CSD16321Q5C
Manufacturer
Texas Instruments
Part Number (MPN)
CSD16321Q5C
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
CSD16321Q
Detailed Description
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 31A continuous drain current, and 2.4mOhm maximum drain-source resistance at 8V. NexFET process technology, single quad drain triple source element, with a typical gate charge of 14nC at 4.5V. Operates from -55°C to 150°C with 3100mW maximum power dissipation.
Package
VSON-CLIP EP
Key Features
Package: VSON-CLIP EP
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
PDF CSD16321Q5C Datasheet
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Ordering Code Family

CSD16321Q groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Texas Instruments CSD16321Q5C MOSFETs technical specifications.

General

Series
CSD16321Q5C
RoHS
Yes with Exemption
Number of Pins
8
Number of Channels
1 Channel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package
VSON-CLIP EP
Lead Shape
No Lead

Related Parts Comparison (CSD16321Q5C vs CSD16321Q5 vs CSD18541F5 vs CSD43301Q5M)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Texas InstrumentsCSD16321Q5C
Texas InstrumentsCSD16321Q5
Texas InstrumentsCSD18541F5
Texas InstrumentsCSD43301Q5M
RoHSYes with ExemptionYesYesYes
SeriesCSD16321Q5C--FemtoFET™CSD43301Q5M
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C---55°C ~ 150°C (TJ)-40°C ~ 125°C (TA)
PackageVSON-CLIP EPPowerTDFN-8--LSON-CLIP (DQP)-12
TechnologySi--MOSFET (Metal Oxide)Si
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Texas Instruments CSD16321Q5C MOSFETs Overview

N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 31A continuous drain current, and 2.4mOhm maximum drain-source resistance at 8V. NexFET process technology, single quad drain triple source element, with a typical gate charge of 14nC at 4.5V. Operates from -55°C to 150°C with 3100mW maximum power dissipation.

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