Texas Instruments CSD16321Q5C MOSFETs
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD16321Q5C
Base Model
Detailed Description
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 31A continuous drain current, and 2.4mOhm maximum drain-source resistance at 8V. NexFET process technology, single quad drain triple source element, with a typical gate charge of 14nC at 4.5V. Operates from -55°C to 150°C with 3100mW maximum power dissipation.
Package
VSON-CLIP EP
Key Features
Package: VSON-CLIP EP
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
CSD16321Q5C Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD16321Q5C MOSFETs technical specifications.
General
Series
CSD16321Q5C
RoHS
Yes with Exemption
Number of Pins
8
Number of Channels
1 Channel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package
VSON-CLIP EP
Lead Shape
No Lead
Alternate Parts Comparison (CSD16321Q5C vs CSD16321Q5 vs CSD18541F5 vs CSD43301Q5M)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes with Exemption | Yes | Yes | Yes |
| Series | CSD16321Q5C | -- | FemtoFET™ | CSD43301Q5M |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -- | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) |
| Package | VSON-CLIP EP | PowerTDFN-8 | -- | LSON-CLIP (DQP)-12 |
| Technology | Si | -- | MOSFET (Metal Oxide) | Si |
| Action |
Texas Instruments CSD16321Q5C MOSFETs Overview
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 31A continuous drain current, and 2.4mOhm maximum drain-source resistance at 8V. NexFET process technology, single quad drain triple source element, with a typical gate charge of 14nC at 4.5V. Operates from -55°C to 150°C with 3100mW maximum power dissipation.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
CSD16322Q5CTexas InstrumentsN-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration.
CSD18541F5Texas Instruments60V, N ch NexFET MOSFET™, single LGA 1.5 x 0.8mm, 65mOhm 3-PICOSTAR -55 to 150