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Texas Instruments CSD23202W10T MOSFETs

-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA -55 to 150

17,000 ActiveTexas InstrumentsCSD23202WDSBGA-4$0.85
CSD23202W10T DSBGA-4 package illustration

Same model may have multiple batches, images only for reference.

CSD23202W10T
Manufacturer
Part Number (MPN)
CSD23202W10T
Base Model
Detailed Description
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA -55 to 150
Package
DSBGA-4
Lifecycle Status
Active
Datasheet
PDF CSD23202W10T Datasheet
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Ordering Code Family

CSD23202W groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Texas Instruments CSD23202W10T MOSFETs technical specifications.

General

Series
CSD23202W10
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
2.2 A
Rds on Drain Source Resistance
92 mOhms

Related Parts Comparison (CSD23202W10T vs CSD23202W10 vs CSD75205W1015 vs CSD16322Q5C)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
RoHSYesYesYesYes with Exemption
ConfigurationSingleSingleDualSingle Quad Drain Triple Source
PackageDSBGA-4DSBGA-4DSBGAVSON-CLIP EP
Mounting TypeSMD/SMT--Surface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C---55°C ~ 150°C-55°C ~ 150°C
Channel ModeEnhancement--EnhancementEnhancement
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