Texas Instruments CSD23202W10 MOSFETs
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD23202W10
Base Model
Detailed Description
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA
Package
DSBGA-4
Lifecycle Status
Active
Datasheet
CSD23202W10 Datasheet
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Technical Specifications
Texas Instruments CSD23202W10 MOSFETs technical specifications.
General
RoHS
Yes
Vds V
-12
Vgs V
-6
Configuration
Single
Rds on at Vgs 4 5 V Max M
53
Rds on at Vgs 2 5 V Max M
66
Rds on at Vgs 1 8 V Max M
92
ID Peak Max a
-25
ID Max Cont a
-2.2
Qg Typ Nc
2.9
Related Parts Comparison (CSD23202W10 vs CSD23202W10T vs CSD75205W1015 vs CSD16322Q5C)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes with Exemption |
| Configuration | Single | Single | Dual | Single Quad Drain Triple Source |
| Package | DSBGA-4 | DSBGA-4 | DSBGA | VSON-CLIP EP |
| Mounting Type | -- | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | -- | - 55°C ~ + 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Action |
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