Texas Instruments CSD22202W15 MOSFETs
P-Ch NexFET MOSFET, -8V, 12.2mOhm, 9-DSBGA, WLP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD22202W15
Detailed Description
P-Ch NexFET MOSFET, -8V, 12.2mOhm, 9-DSBGA, WLP
Package
DSBGA-9
Lifecycle Status
Active
Datasheet
CSD22202W15 Datasheet
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Technical Specifications
Texas Instruments CSD22202W15 MOSFETs technical specifications.
General
Series
CSD22202W15
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
8 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
17.4 mOhms
Vgs Gate Source Voltage
- 6 V, + 6 V
Alternate Parts Comparison (CSD22202W15 vs CSD75205W1015 vs CSD16322Q5C vs CSD16321Q5C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes with Exemption | Yes with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Package | DSBGA-9 | DSBGA | VSON-CLIP EP | VSON-CLIP EP |
| Series | CSD22202W15 | -- | CSD16322Q5C | CSD16321Q5C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 38 ns | -- | 3.7 ns | 17 ns |
| ID Continuous Drain Current | 5 A | -- | 100 A | 100 A |
| Pd Power Dissipation | 1.5 W | -- | 3.1 W | 3.1 W |
| Qg Gate Charge | 6.5 nC | -- | 6.8 nC | 14 nC |
| Rds on Drain Source Resistance | 17.4 mOhms | -- | 5.8 mOhms | 2.4 mOhms |
| Action |
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