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Texas Instruments CSD19536KCS MOSFETs

100V N-Ch MOSFET, 2.7mΩ, TO-220 Single

6,000 ActiveTexas InstrumentsTO-220-3$2.92
CSD19536KCS TO-220-3 package illustration

Same model may have multiple batches, images only for reference.

CSD19536KCS
Manufacturer
Part Number (MPN)
CSD19536KCS
Detailed Description
100V N-Ch MOSFET, 2.7mΩ, TO-220 Single
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF CSD19536KCS Datasheet
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Technical Specifications

Texas Instruments CSD19536KCS MOSFETs technical specifications.

General

Series
CSD19536KCS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
259 A
Rds on Drain Source Resistance
2.7 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Alternate Parts Comparison (CSD19536KCS vs CSD75205W1015 vs CSD16322Q5C vs CSD16321Q5C)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
RoHSYesYesYes with ExemptionYes with Exemption
Channel ModeEnhancementEnhancementEnhancementEnhancement
ConfigurationSingleDualSingle Quad Drain Triple SourceSingle Quad Drain Triple Source
PackageTO-220-3DSBGAVSON-CLIP EPVSON-CLIP EP
SeriesCSD19536KCS--CSD16322Q5CCSD16321Q5C
Number of Channels1 Channel--1 Channel1 Channel
Fall Time5 ns--3.7 ns17 ns
Forward Transconductance Min307 S--106 S150 S
ID Continuous Drain Current259 A--100 A100 A
Pd Power Dissipation375 W--3.1 W3.1 W
Qg Gate Charge118 nC--6.8 nC14 nC
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