Texas Instruments CSD19536KCS MOSFETs
100V N-Ch MOSFET, 2.7mΩ, TO-220 Single
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD19536KCS
Detailed Description
100V N-Ch MOSFET, 2.7mΩ, TO-220 Single
Package
TO-220-3
Lifecycle Status
Active
Datasheet
CSD19536KCS Datasheet
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Technical Specifications
Texas Instruments CSD19536KCS MOSFETs technical specifications.
General
Series
CSD19536KCS
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
259 A
Rds on Drain Source Resistance
2.7 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (CSD19536KCS vs CSD75205W1015 vs CSD16322Q5C vs CSD16321Q5C)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes with Exemption | Yes with Exemption |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Dual | Single Quad Drain Triple Source | Single Quad Drain Triple Source |
| Package | TO-220-3 | DSBGA | VSON-CLIP EP | VSON-CLIP EP |
| Series | CSD19536KCS | -- | CSD16322Q5C | CSD16321Q5C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Fall Time | 5 ns | -- | 3.7 ns | 17 ns |
| Forward Transconductance Min | 307 S | -- | 106 S | 150 S |
| ID Continuous Drain Current | 259 A | -- | 100 A | 100 A |
| Pd Power Dissipation | 375 W | -- | 3.1 W | 3.1 W |
| Qg Gate Charge | 118 nC | -- | 6.8 nC | 14 nC |
| Action |
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