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STMicroelectronics STQ2HNK60ZR-AP MOSFETs

N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

451 ActiveSTMicroelectronicsTO-92-3$1.10
STQ2HNK60ZR-AP - No Image Available

Same model may have multiple batches, images only for reference.

STQ2HNK60ZR-AP
Manufacturer
Part Number (MPN)
STQ2HNK60ZR-AP
Detailed Description
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
Package
TO-92-3
Lifecycle Status
Active
Datasheet
PDF STQ2HNK60ZR-AP Datasheet
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Technical Specifications

STMicroelectronics STQ2HNK60ZR-AP MOSFETs technical specifications.

General

Series
SuperMESH™
Package / Case
TO-226-3, TO-92-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
15 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
280 pF @ 25 V
Power Dissipation Max
3W (Tc)

Alternate Parts Comparison (STQ2HNK60ZR-AP vs STQ1NK60ZR-AP vs STQ1HNK60R-AP vs STQ1NK80ZR-AP)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesSuperMESH™SuperMESH™SuperMESH™SuperMESH™
Package / CaseTO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-3TO-226-3, TO-92-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C500mA (Tc)300mA (Tc)400mA (Tc)300mA (Tc)
Drain to Source Voltage Vdss600 V600 V600 V800 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs15 nC @ 10 V6.9 nC @ 10 V10 nC @ 10 V7.7 nC @ 10 V
Input Capacitance Ciss Max Vds280 pF @ 25 V94 pF @ 25 V156 pF @ 25 V160 pF @ 25 V
Power Dissipation Max3W (Tc)3W (Tc)3W (Tc)3W (Tc)
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