STMicroelectronics STQ1HNK60R-AP MOSFETs

Name: STQ1HNK60R-AP
Brand: STMicroelectronics
SKU: STQ1HNK60R-AP
Price: 0.2856 USD
Availability: InStock

600V 1A N-Ch MOSFET, TO-92, 7.3 Ohm Rds(on)

1,722 ActiveSTMicroelectronicsTO-92-3$0.29

Same model may have multiple batches, images only for reference.

STQ1HNK60R-AP

Manufacturer

STMicroelectronics

Part Number (MPN)

STQ1HNK60R-AP

Technical Specifications

STMicroelectronics STQ1HNK60R-AP MOSFETs technical specifications.

General

Series

SuperMESH™

Package / Case

TO-226-3, TO-92-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Lifecycle Status

Active

Vgs Th Max ID

3.7V @ 250µA

Gate Charge Qg Max Vgs

10 nC @ 10 V

Vgs Max

±30V

Input Capacitance Ciss Max Vds

156 pF @ 25 V

Power Dissipation Max

3W (Tc)

Alternate Parts Comparison (STQ1HNK60R-AP vs STQ1NK60ZR-AP vs STQ1NK80ZR-AP vs STQ2HNK60ZR-AP)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSTQ1HNK60R-AP	STMicroelectronicsSTQ1NK60ZR-AP	STMicroelectronicsSTQ1NK80ZR-AP	STMicroelectronicsSTQ2HNK60ZR-AP
Series	SuperMESH™	SuperMESH™	SuperMESH™	SuperMESH™
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Lifecycle Status	Active	Active	Active	Active
Current Continuous Drain ID 25 C	400mA (Tc)	300mA (Tc)	300mA (Tc)	500mA (Tc)
Description	--	--	--	--
Detailed Description	--	--	--	--
Drain to Source Voltage Vdss	600 V	600 V	800 V	600 V
Drive Voltage Max Rds on Min Rds on	10V	10V	10V	10V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Gate Charge Qg Max Vgs	10 nC @ 10 V	6.9 nC @ 10 V	7.7 nC @ 10 V	15 nC @ 10 V
Action	RFQ	RFQ	RFQ	RFQ

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