STMicroelectronics STQ1NK80ZR-AP MOSFETs

Name: STQ1NK80ZR-AP
Brand: STMicroelectronics
SKU: STQ1NK80ZR-AP
Price: 0.3765 USD
Availability: InStock

N-Ch 800V 0.3A MOSFET TO-92 16R Rds(on)

1,716 ActiveSTMicroelectronicsTO-92-3$0.38

Same model may have multiple batches, images only for reference.

STQ1NK80ZR-AP

Manufacturer

STMicroelectronics

Part Number (MPN)

STQ1NK80ZR-AP

Technical Specifications

STMicroelectronics STQ1NK80ZR-AP MOSFETs technical specifications.

General

Series

SuperMESH™

Package / Case

TO-226-3, TO-92-3

Mounting Type

Through Hole

Operating Temperature

-55°C ~ 150°C (TJ)

Lifecycle Status

Active

Vgs Th Max ID

4.5V @ 50µA

Gate Charge Qg Max Vgs

7.7 nC @ 10 V

Vgs Max

±30V

Input Capacitance Ciss Max Vds

160 pF @ 25 V

Power Dissipation Max

3W (Tc)

Alternate Parts Comparison (STQ1NK80ZR-AP vs STQ1NK60ZR-AP vs STQ1HNK60R-AP vs STQ2HNK60ZR-AP)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSTQ1NK80ZR-AP	STMicroelectronicsSTQ1NK60ZR-AP	STMicroelectronicsSTQ1HNK60R-AP	STMicroelectronicsSTQ2HNK60ZR-AP
Series	SuperMESH™	SuperMESH™	SuperMESH™	SuperMESH™
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Lifecycle Status	Active	Active	Active	Active
Current Continuous Drain ID 25 C	300mA (Tc)	300mA (Tc)	400mA (Tc)	500mA (Tc)
Drain to Source Voltage Vdss	800 V	600 V	600 V	600 V
Drive Voltage Max Rds on Min Rds on	10V	10V	10V	10V
Fet Type	N-Channel	N-Channel	N-Channel	N-Channel
Gate Charge Qg Max Vgs	7.7 nC @ 10 V	6.9 nC @ 10 V	10 nC @ 10 V	15 nC @ 10 V
Input Capacitance Ciss Max Vds	160 pF @ 25 V	94 pF @ 25 V	156 pF @ 25 V	280 pF @ 25 V
Power Dissipation Max	3W (Tc)	3W (Tc)	3W (Tc)	3W (Tc)
Action	RFQ	RFQ	RFQ	RFQ

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