STMicroelectronics STPSC4H065DI Rectifier Diodes
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC4H065DI
Base Model
Detailed Description
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2 Insulated, TO-220AC
Lifecycle Status
Active
Datasheet
STPSC4H065DI Datasheet
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Technical Specifications
STMicroelectronics STPSC4H065DI Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2 Insulated, TO-220AC
Mounting Type
Through Hole
Lifecycle Status
Active
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
40 µA @ 650 V
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Operating Temperature Junction
-40°C ~ 175°C
Current Average Rectified IO
4A
Voltage Forward Vf Max If
1.75 V @ 4 A
Related Parts Comparison (STPSC4H065DI vs STPSC4H065D vs STPSC4H065B-TR vs STPSC10H065DI)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-220-2 Insulated, TO-220AC | TO-220-2 | TO-252-3, DPAK | TO-220-2 Insulated, TO-220AC |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 4A | 4A | 4A | 10A |
| Current Reverse Leakage Vr | 40 µA @ 650 V | 40 µA @ 650 V | 40 µA @ 650 V | 100 µA @ 650 V |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 650 V | 650 V |
| Voltage Forward Vf Max If | 1.75 V @ 4 A | 1.75 V @ 4 A | 1.75 V @ 4 A | 1.75 V @ 10 A |
| Action |
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